Method of producing the same

ABSTRACT

A method of producing a semiconductor device includes the steps of: preparing a double SOI substrate, forming a deep trench, filling the deep trench, forming an opening, forming a cavity, depositing a polycrystalline silicon layer, and forming a bipolar transistor.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional application of the prior application Ser. No.11/191,190 filed Jul. 28, 2005, now U.S. Pat. No. 7,205,587.

BACKGROUND OF THE INVENTION AND RELATED ART STATEMENT

The present invention relates to a method of producing a semiconductordevice.

A bipolar transistor is capable of running at a high speed as comparedwith a MOSFET, and has a high current drive performance. Therefore, thebipolar transistor is suitable for an LSI for driving a laser for lighttransmission or a power amplifier of a cellular phone. When the bipolartransistors are mounted in a single chip together with MOSFETs capableof high density mounting, it is possible to obtain performance difficultto achieve in an LSI formed only of MOSFETs.

A conventional process of producing a BiCMOS formed of bipolartransistors and CMOSs, i.e., p-type MSFETs and n-type MOSFETs, on asingle chip will be explained with reference to FIGS. 7(A) to 7(C)(refer to Patent Reference 1). FIGS. 7(A) to 7(C) are views showing aconventional process of producing the BiCMOS.

A silicon oxide layer 220 is formed on a silicon substrate 210, and asingle crystal silicon layer 230 is formed on the silicon oxide layer220 to form an SOI substrate 205 (FIG. 7(A)). LOCOS layers 300 areformed in the single crystal silicon layer 230 for separating elements,so that the single crystal silicon layer 230 is divided into a singlecrystal silicon layer 238 in a MOSFET forming area 258 and a singlecrystal silicon layer 235 in a bipolar transistor forming area 255.After the LOCOS layers 300 are formed in the single crystal siliconlayer 230 to form a structure shown in FIG. 7(A), an oxide layer 260 isdeposited on an entire upper surface of the structure with CVD method,and the single crystal silicon layer 235 in the bipolar transistorforming area 255 is exposed (FIG. 7(B)).

A single crystal silicon layer 236 is formed on the single crystalsilicon layer 235 in the bipolar transistor forming area 255 throughselective epitaxial growth of silicon. After the single crystal siliconlayer 236 is formed, a portion of the oxide layer 260 corresponding tothe MOSFET forming area 258 is removed (FIG. 7(C)). Then, a MOSFET isformed on the single crystal silicon layer 238 in the MOSFET formingarea 258, and a bipolar transistor is formed on the single crystalsilicon layers 235 and 236 in the bipolar transistor forming area 255,thereby obtaining the BiCMOS.

In the method of forming the BiCMOS on the SOI substrate describedabove, a LOCOS layer for electrically separating the bipolar transistortends to be shrunk during a heating process for forming elements such asMOSFET, thereby generating stress in an active area. In order to solvethis problem, Patent Reference 2 has proposed a method of forming aBiCMOS using a substrate having a double SOI structure.

-   Patent Reference 1: Japanese Patent Publication (Kokai) No. 06-69430-   Patent Reference 2: Japanese Patent Publication (Kokai) No.    2001-274234

In the manufacturing method using the substrate having the double SOIstructure, it is possible to reduce stress in the active area, therebyobtaining a stable BiCMOS. However, when a vertical type bipolartransistor with high performance and high mounting density is produced,it is still difficult to reduce a collector resistance at a bottomportion thereof.

In view of the problems described above, an object of the presentinvention is to provide a method of producing a semiconductor device, inwhich it is possible to provide a low resistance layer with anappropriate shape at a bottom portion of a vertical type bipolartransistor.

Further objects and advantages of the invention will be apparent fromthe following description of the invention.

SUMMARY OF THE INVENTION

In order to attain the objects described above, according to the presentinvention, a method of producing a semiconductor device includes thesteps of: preparing a double SOI substrate, forming a deep trench,filling the deep trench, forming an opening, forming a cavity,depositing a polycrystalline silicon layer, and forming a bipolartransistor.

In particular, in the step of preparing the double SOI substrate, afirst oxide layer, a first single crystal silicon layer, a second oxidelayer, and a second single crystal silicon layer are formed on a supportsubstrate in this order to prepare the SOI substrate. In the step offorming the deep trench, the second single crystal silicon layer isetched down to a depth where the first oxide layer is exposed to formthe deep trench for defining a bipolar transistor forming area. In thestep of filling the deep trench, a silicon nitride layer and a siliconoxide layer are deposited on the double SOI substrate to fill the deeptrench.

In the step of forming the opening, the bipolar transistor forming areais etched down to a depth where the second oxide layer is exposed. Inthe step of forming the cavity, the second oxide layer in the bipolartransistor forming area is removed with wet etching. In the step ofdepositing the polycrystalline silicon layer, the polycrystallinesilicon layer is formed in the opening and the cavity communicating witheach other. In the step of forming the bipolar transistor, the bipolartransistor is formed on the second single crystal silicon layer in thebipolar transistor forming area.

In the method of producing the semiconductor, in particular the bipolartransistor, the second oxide layer is removed to form the cavity, andthe polycrystalline silicon layer is formed in the cavity. Accordingly,it is possible to form the polycrystalline silicon layer with anappropriate shape at a bottom portion of the second single crystal layerin the bipolar transistor forming area. With the polycrystalline siliconlayer, it is possible to reduce a collector resistance of the bipolartransistor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(A) to 1(D) are views showing a process of producing a BiCMOS(No. 1);

FIGS. 2(A) to 2(D) are views showing a process of producing a BiCMOS(No. 2);

FIGS. 3(A) to 3(C) are views showing a process of producing a BiCMOS(No. 3);

FIGS. 4(A) to 4(C) are views showing a process of producing a BiCMOS(No. 4);

FIGS. 5(A) to 5(D) are views showing a process of producing a BiCMOS(No. 5);

FIGS. 6(A) to 6(C) are views showing a process of producing a BiCMOS(No. 6); and

FIGS. 7(A) to 7(C) are views showing a conventional process of producinga BiCMOS.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Hereunder, embodiments of the present invention will be explained withreference to the accompanying drawings. A configuration and arrangementof an embodiment are schematically presented for explaining theinvention. The embodiments will be explained with configurations(materials) and numerical conditions as preferred examples, and theinvention is not limited thereto.

FIGS. 1(A) to 1(D) to 6(A) to 6(C) are views showing a process ofproducing a BiCMOS having a bipolar transistor and a CMOS both formed ona same single substrate as semiconductor devices. First, a double SOIsubstrate 5 having a double SOI structure is prepared. The double SOIsubstrate 5 has a laminated structure in which, on a semiconductorsubstrate 10 such as a silicon substrate, a first oxide layer 20, afirst single crystal silicon layer 30, a second oxide layer 40, and asecond single crystal silicon layer 50 are formed sequentially in thisorder. When the double SOI substrate 5 is prepared, a silicon layer withan oxide layer formed thereon for producing an SOI substrate may beattached to a semiconductor substrate twice. Alternatively, after asilicon layer with an oxide layer formed thereon is attached to asemiconductor substrate, SIMOX (separation by implanted oxygen) isperformed in which oxygen is implanted in a single crystal siliconsubstrate at a high density.

In the embodiment, the first oxide layer 20 and the second oxide layer40 have a thickness of about 200 nm. The first single crystal siliconlayer 30 is an n+ type single crystal silicon layer with a thickness ofabout 3.0 μm, and the second single crystal silicon layer 50 is an n−type single crystal silicon layer with a thickness of about 500 nm (FIG.1(A)).

In the next step, deep trenches 52 are formed in the double SOIsubstrate 5 in an area defining a bipolar transistor forming area 55with lithography or dry etching. The deep trenches 52 have a width ofabout 500 nm, and a depth deep enough so that the first oxide layer 20is exposed. Accordingly, the lamination including the first singlecrystal silicon layer 30 and the second single crystal silicon layer 50is divided into several isolated areas by the deep trenches 52. Afterthe deep trenches 52 are formed, a silicon nitride layer 60 with athickness of about 15 nm is formed on a surface of the second singlecrystal silicon layer 50 and inner surfaces of the deep trenches 52 withCVD (chemical vapor deposition) method (FIG. 1(B)).

In the next step, a silicon oxide layer (TEOS film) 70 is formed usingTEOS (tetraethyl-ortho-silicate) for filling the deep trenches 52 withlow pressure CVD (LPCVD; low pressure CVD). The TEOS film 70 is formedwith CVD method using TEOS having a good ability of covering.Accordingly, it is possible to filling the deep trenches 52 without agap. At this time, the TEOS film 70 is formed at an upper portion of anupper surface of the second single crystal silicon layer 50 (FIG. 1(C)).

In the next step, the TEOS film 70 formed on the silicon nitride layer60 on the upper surface of the second single crystal silicon layer 50 isremoved with chemical mechanical polishing (CMP) to expose the siliconnitride layer 60 on the upper surface of the second single crystalsilicon layer 50. At this time, a part of the TEOS film 70 remains inthe deep trenches 52 as a remaining film (remaining TEOS film) 72 (FIG.1(D)). It is preferred that the structure shown in FIG. 1(D) have a flatupper surface.

In the next step, a silicon nitride layer with a thickness of about 30nm is additionally formed on an entire upper surface of the structureshown in FIG. 1(D), so that a silicon nitride layer 62 with the siliconnitride layer 60 as a lower layer covers the upper surface (FIG. 2(A)).

In the next step, the silicon nitride layer 62 is patterned withlithography or dry etching to form an opening 54 for forming a collectorin the bipolar transistor forming area 55. The dry etching is performedfrom a surface of the silicon nitride layer 62 down to a depth where thesecond oxide layer 40 is exposed (FIG. 2(B)).

In the next step, the second oxide layer 40 in the bipolar transistorforming area 55 is removed with wet etching using hydrogen fluoride(HF). The wet etching proceeds in a lateral direction up to the siliconnitride layer 62 in sidewalls 53 of the deep trenches 52. Accordingly,the second oxide layer 40 is removed at an area exposed to the opening54 as well as an area extending under the second single crystal siliconlayer 50 to form a cavity 56 for forming the collector (FIG. 2(C)).

In the next step, with the LPCVD method, an n+ polycrystalline silicondoped with arsenic (As) or phosphorus (P) at a high concentration isdeposited on an entire upper surface of the structure shown in FIG. 2(C)to have a thickness of about 1.0 μm. During the deposition of the n+polycrystalline silicon, the n+ polycrystalline silicon enters the areabelow the second single crystal silicon layer 50 in the cavity 56 and isdeposited there, so that the opening 54 and the cavity 56 are filledwith the n+ polycrystalline silicon. Then, through etching back, a topportion of the polycrystalline silicon filled in the opening 54 and thecavity 56 and exposed on a front surface and the upper surface of thesilicon nitride layer 62 are flatten to form a single flat surface.Accordingly, an n+ polycrystalline silicon layer 80 is formed in theopening 54 and the cavity 56 to be an embedded collector layer of thebipolar transistor (FIG. 2(D)).

Alternatively, after the cavity 56 is filled with the n+ polycrystallinesilicon, a metal such as tungsten (W) may be deposited to fill theopening 54 with CVD method. In this case, the metal is diffused into thesecond single crystal silicon layer 50, thereby reducing resistance ofthe second single crystal silicon layer 50.

In the next step, the exposed surface of the n+ polycrystalline siliconlayer 80, i.e., the top portion, is oxidized to form a cap oxide layer(surface protective layer) 90 (FIG. 3(A)). Then, known photolithographyand dry etching are performed on an area defining an MOSFET forming area58. Accordingly, the silicon nitride layer 62 and the second singlecrystal silicon layer 50 in the area are removed to form a shallowtrench 59 exposing the second oxide layer 40. A silicon oxide layerfills in the shallow trench 59 with CVD method to form an elementseparation oxide film 100 (FIG. 3(B)).

In the next step, the silicon nitride layer 62 in the bipolar transistorforming area 55 is removed with known photolithography and dry etchingto expose the second single crystal silicon layer 50. At this time, apart of the silicon nitride layer 62 remains. An exposed surface of thesecond single crystal silicon layer 50 is thermally oxidized to form asilicon thermal oxide film 92 with a thickness of about 50 nm (FIG.3(C)). Then, the remaining silicon nitride film (62 in FIG. 3(C)) iscompletely removed. A gate oxide film 110 of the MOSFET is formed on asurface of the second single crystal silicon layer 50 in the MOSFETforming area 58 (FIG. 4(A)).

In the next step, a doping process is performed on the second singlecrystal silicon layer 50 in the MOSFET forming area 58. The type of ionsimplanted by the doping process depends on whether the MSFET becomes anN-type MOSFET or a p-type MOSFET. After the doping process, apolycrystalline silicon film 120 with a thickness of about 150 nm isformed on an entire upper surface of a structure shown in FIG. 4(A) withCVD method.

In the next step, the polycrystalline silicon film 120 is processed toform a gate electrode 123 of the MOSFET and a base electrode 125 of thebipolar transistor. Then, boron (B) is selectively doped into the baseelectrode 125 with ion implantation. Another doping process is performedon the MOSFET forming area 58 to form an LDD (lightly doped drain) withion implantation. After doping the MOSFET forming area 58, a siliconnitride film 130 with a thickness of about 200 nm is formed on an entiresupper surface of a structure shown in FIG. 4(B) with known CVD method(FIG. 4(C)).

In the next step, with known photolithography and dry etching, thesilicon nitride film 130 and the base electrode 125 in an emitterelectrode forming area 84 for forming an emitter electrode of thebipolar transistor are removed sequentially to form an opening for anemitter electrode opening 85, and the silicon thermal oxide film 92 isexposed (FIG. 5(A)). Then, the silicon thermal oxide film 92 in theemitter electrode forming area 84 is removed with wet etching usinghydrogen fluoride (HF). In the wet etching, the silicon thermal oxidefilm 92 is removed in a self-aligning way. Also, though controlling anetching time of the wet etching, a sidewall of the emitter electrodeopening 85 is etched laterally by about 200 nm. Accordingly, a cavity 86for forming an emitter electrode is formed in a portion where thesilicon thermal oxide film 92 is removed (FIG. 5(B)).

In the next step, silicon is selectively grown through epitaxial growthin the emitter electrode 85 and the emitter electrode cavity 86 to fillthe emitter electrode opening 85. More specifically, silicon isselectively grown through epitaxial growth from a lower surface of anend of the base electrode 125 exposed with wet etching toward the secondsingle crystal silicon layer 50 to form an epitaxial growth siliconlayer 140. The epitaxially grown silicon is situated in the emitterelectrode cavity 86 and fills a sandwiched area. The epitaxially grownsilicon has a polycrystalline structure near the base electrode 125, anda single crystal structure near the second single crystal silicon layer50. Then, a sidewall insulating film 94 made of silicon nitride isformed on a sidewall of the emitter electrode opening 85 with CVD method(FIG. 5(C)).

The epitaxial growth silicon layer 140 is a p-type conductive layercontaining 5×10¹⁸/cc of boron (B) as an impurity. As a result of theepitaxial growth, a portion around the second single crystal siliconlayer 50 becomes the p-type. The epitaxial growth silicon layer 140 maybe formed with known hetero epitaxial growth of SiGe to form a compositemultiple layered structure including a SiGe layer as a part thereof.Then, a polycrystalline silicon layer doped with phosphorous at a highconcentration is grown on an entire upper surface of a structure shownin FIG. 5(C). The polycrystalline silicon layer is processed to form anemitter electrode 150 (FIG. 5(D)).

In the next step, the silicon nitride film 130 in the MOSFET formingarea 58 is removed, and ion implantation and activation annealing areperformed with the gate electrode 123 as a mask to form a drain area 111and a source area 113 of the MOSFET (FIG. 6(A)). Then, an intermediateinsulating film 160 made of silicon oxide is formed with CVD method. Astructure shown in FIG. 6(A) is thermally processed with lamp annealing(RTA; Rapid Thermal Annealing) at 900° C. for about 30 seconds. With theRTA, phosphorous in the emitter electrode 150 diffuses widely andshallowly into the epitaxial growth silicon layer 140 and a surface ofthe second single crystal silicon layer 50 contacting the epitaxialgrowth silicon layer 140 to form an active emitter 142. A p-typeconductive portion of the second single crystal silicon layer 50 with nophosphorous diffused therein becomes a p-type active base 144. A portionof the epitaxial growth silicon layer 140 near the base electrode 125with no phosphorous diffused therein also becomes the p-type active base144 (FIG. 6(B)).

In the next step, contact holes for the source, drain, and gateelectrodes of the MOSFET, and contact holes of the source, drain, andgate electrodes of the bipolar transistor (not shown) are formed in theintermediate insulating film 160, the silicon nitride film 130, and thecap oxide layer 90 at appropriate locations with known photolithographyand dry etching, respectively. Tungsten (W) plugs are embedded in thecontact holes to form contacts. The W plugs are used as a gate plug 171,a drain plug 172, and a source plug 173 of the MOSFET, and a gate plug175, a drain plug 176, and a source plug 177 of the bipolar transistor(FIG. 6(C)). The W plugs are equivalent to metal electrodes of theMOSFET and bipolar transistor. After the W plugs are formed, aconductive pattern made of metal such as aluminum is formed on theintermediate insulating film 160, and electrically connected to anexternal circuit.

In the method of producing the bipolar transistor according to thepresent invention, the polycrystalline silicon is deposited in thecavity formed by removing the second oxide layer. Accordingly, it ispossible to form the polycrystalline silicon with an appropriate shapeat the bottom of the second single crystal silicon layer in the areadefined by the deep trench. In the semiconductor device with the bipolartransistor, it is possible to reduce the collector resistance of thebipolar transistor with the polycrystalline silicon.

The disclosure of Japanese Patent Application No. 2004-246374, filed onAug. 26, 2004, is incorporated in the application.

While the invention has been explained with reference to the specificembodiments of the invention, the explanation is illustrative and theinvention is limited only by the appended claims.

1. A method of producing a semiconductor device, comprising the stepsof: forming a first oxide layer, a first single crystal silicon layer, asecond oxide layer, and a second single crystal silicon layer on asupport substrate in this order to prepare a double SOI substrate;etching the second single crystal silicon layer in a bipolar transistorforming area on the double SOI substrate from a front surface of thedouble SOI substrate down to a depth where the first oxide layer isexposed to form a deep trench, depositing a silicon nitride layer and asilicon oxide layer on the double SOI substrate to fill the deep trench,etching the bipolar transistor forming area down to a depth where thesecond oxide layer is exposed to form an opening, removing the secondoxide layer in the bipolar transistor forming area with wet etching toform a cavity, depositing a polycrystalline silicon layer in the openingand the cavity, and forming a bipolar transistor on the second singlecrystal silicon layer in the bipolar transistor forming area.
 2. Amethod of producing a semiconductor device according to claim 1, furthercomprising, after the step of depositing the polycrystalline siliconlayer, forming an element separation oxide film in the second singlecrystal silicon layer in an area where the bipolar transistor formingarea is not situated and the deep trench is not formed for defining anMOSFET forming area, and forming an MOSFET in the MOSFET forming area.